PART |
Description |
Maker |
WF512K64-120G4WM5 WF512K64-90G4WM5 WF512K64-120G4W |
70ns; 5V power supply; 512K x 64 flash module Flash MCP 512Kx64 5V FLASH MODULE 120ns; 5V power supply; 512K x 64 flash module 90ns; 5V power supply; 512K x 64 flash module
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WEDC[White Electronic Designs Corporation]
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WE512K16-XG4X WE512K16-140G4C WE512K16-140G4CA WE5 |
Access time:200 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:20150 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:150 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:140 ns; 5V power supply; 512K x 16 CMOS EEPROM module EEPROM MCP
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White Electronic Designs
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EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA |
20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 512Kx8 Monolithic SRAM SMD 5962-95600 512Kx8 Monolithic SRAM, SMD 5962-95600 SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
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White Electronic Designs ETC[ETC] Electronic Theatre Controls, Inc.
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WF128K32N-120H1I5A WF128K32N-150H1I5 WF128K32N-50H |
120ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 150ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 60ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 70ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716 90ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
|
White Electronic Designs
|
WMS512K8L-100DEIE WMS512K8L-100DEIEA WMS512K8L-120 |
100ns; 512K x 8 monolithic SRAM, SMD 5962-95613 120ns; 512K x 8 monolithic SRAM, SMD 5962-95613 70ns; 512K x 8 monolithic SRAM, SMD 5962-95613 85ns; 512K x 8 monolithic SRAM, SMD 5962-95613
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White Electronic Designs
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EDI88257C EDI88257C/LP-C EDI88256C70CC EDI88256C70 |
70ns; 5V power supply; 256K x 18 monolithic SRAM 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-HMSOP T&R 256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM(存取时0500ns
|
White Electronic Designs Corporation
|
AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM 2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM) 2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
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Alliance Semiconductor Corporation SEMICOA[Semicoa Semiconductor]
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ASM809TEUR-T ASM810TEUR ASM810SEUR ASM810REUR ASM8 |
4.00 V, 3 pin microcontroller power supply supervisor 4 V, 3 pin microcontroller power supply supervisor 2.93 V, 3 pin microcontroller power supply supervisor 3.08 V, 3 pin microcontroller power supply supervisor 2.63 V, 3 pin microcontroller power supply supervisor 4.38 V, 3 pin microcontroller power supply supervisor 4.63 V, 3 pin microcontroller power supply supervisor 3 Pin Microcontroller Power Supply Supervisor 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3 Low Power CPU Supervisors
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Alliance Semiconductor, Corp. ALSC Alliance Semiconductor Corporation Alliance Semiconductor Corp...
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AM29F040B-120JF AM29F040B-90ED |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512K x 8; Package/Case:32-PLCC; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting Type:Surface Mount RoHS Compliant: Yes 512K X 8 FLASH 5V PROM, 120 ns, PQCC32 Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512K x 8; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes
|
Spansion, Inc. SPANSION LLC
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K6F4008R2CFAMILY K6F4008R2C-FF850 |
512K X 8 STANDARD SRAM, 85 ns, PBGA48 512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
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IS61WV51232BLL-10BI IS61WV51232ALL-20BI IS64WV5123 |
512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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Integrated Silicon Solution, Inc Integrated Silicon Solu...
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