| PART |
Description |
Maker |
| NE46134-T1-AZ |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
California Eastern Laboratories
|
| 2SD2098 |
NPN Silicon Epitaxial Planar Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
| AMFW-7S-122128-100P2 AMFW-7S-117128-65B AMFW-5S-12 |
8000 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
3700 MHz - 4200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
9600 MHz - 9800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11700 MHz - 12750 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
7200 MHz - 7800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11400 MHz - 12200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| B15V140 |
MEDIUM POWER SILICON MICROWAVE TRANSISTOR
|
BOPOLARICS
ETC[ETC]
List of Unclassifed Manufacturers
|
| ITT2205AF |
RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
| ZX5T851A ZX5T851ASTZ ZX5T851ASTOA |
NPN Med Power Transistor
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE 4500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| FMMTA06 |
NPN Med Power Transistor
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
|
ZETEX[Zetex Semiconductors]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| TGF2021-04-SD |
DC-4 GHz Packaged Power pHEMT 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
TRIQUINT SEMICONDUCTOR INC
|
