| PART |
Description |
Maker |
| MA4VAT907-1061T |
High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz
|
MACOM[Tyco Electronics]
|
| MAX2374EBT MAX2374 |
SiGe, Variable IIP3, Low-Noise Amplifier in UCSP Package
From old datasheet system
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| ZC931TA ZC933TA ZMV931TA ZC933ATA ZMV933TA ZMV934T |
VHF BAND, 22.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SOT-23, 3 PIN
VHF BAND, 7.15 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SOD-323, 2 PIN
VHF BAND, 7.15 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SOT-23, 3 PIN
VHF BAND, 22.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SOD-323, 2 PIN
VHF BAND, 52.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SOD-323, 2 PIN
|
Diodes Inc.
Diodes, Inc.
ZETEX PLC
|
| MV1638 MV1628 |
33 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA DO-7, 2 PIN
15 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-204AA DO-7, 2 PIN
|
ON Semiconductor
|
| MAAV-007088-0001TB MAAV-007088-000100 MAAV-007088- |
PIN Diode Based Variable Attenuator 50 - 1000 MHz
|
Tyco Electronics
|
| BM831 BM831-18 |
0.7~1.4GHz High IIP3 GaAs MMIC Mixer with Integrated LO AMP
|
BeRex Corporation
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| JDV2S29SC |
UHF BAND, SILICON, VARIABLE CAPACITANCE DIODE LEAD FREE, SC2, 1-1R1A, 2 PIN
|
Toshiba, Corp.
|
|
