| PART |
Description |
Maker |
| M2V56S20AKT-6 M2V56S20AKT-5 |
256M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V56S40TP-8 |
256M Synchronous DRAM 256M同步DRAM
|
Mitsubishi Electric, Corp.
|
| M2S56D20AKT M2S56D20ATP M2S56D30AKT M2S56D30ATP M2 |
256M Double Data Rate Synchronous DRAM
|
Elpida Memory
|
| M2S56D40ATP-75L M2S56D40ATP-75AL M2S56D40AKT-75 M2 |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2S56D40ATP75A |
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| HY57V56162 HY57V561620CT HY57V561620CT-H |
4 Banks x 4M x 16Bit Synchronous DRAM
16Mx16|3.3V|8K|6/K/H/8/P/S|SDRSDRAM-256M
|
HYNIX
|
| MT18GTF25672FDY-667E1D4 |
256M X 72 SYNCHRONOUS DRAM MODULE, DMA240 LEAD FREE, MO-256, FBDIMM-240
|
Powerex, Inc.
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82
256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82
64M X 16 DDR DRAM, 0.3 ns, PBGA100
64M X 16 DDR DRAM, 0.255 ns, PBGA100
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
