| PART |
Description |
Maker |
| WS512K32NBV-17H2IE WS512K32NBV-15G2CE WS512K32NBV- |
512Kx32 3.3V SRAM MODULE
|
WEDC[White Electronic Designs Corporation]
|
| WSF512K32-XXX WSF512K32-29H2C WSF512K32-29H2CA WSF |
512KX32 SRAM / FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
| WEDPS512K32-12BC WEDPS512K32-12BI WEDPS512K32-12BM |
512Kx32 SRAM MULTI-CHIP PACKAGE
|
WEDC[White Electronic Designs Corporation]
|
| WEDPS512K32V-XBX WEDPS512K32LV-17BM WEDPS512K32LV- |
512Kx32 SRAM 3.3V MULTI-CHIP PACKAGE
|
WEDC[White Electronic Designs Corporation]
|
| WS512K32V WS512K32V-20H1MA WS512K32NV-15G1UC WS512 |
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM.3模块
512Kx32 SRAM 3.3V MODULE 512Kx32 SRAM3.3模块
GIGATRUE 550 CAT6 PATCH 2 FT, NON BOOT, GREEN
GIGATRUE 6 PATCH CBL CHANNEL, RED, 16 FT
GIGATRUE 550 CAT6 PATCH 100 FT, NON BOOT, BLUE
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 100F BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 3FT BL 25 PK
GIGATRUE 550 CAT6 PATCH CBL NO BOOT 15FT BL 25 PK
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:Yes
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:500W; Capacitance, Cd:3pF; Package/Case:SOT-143; Breakdown Voltage Min:6V; Junction Capacitance:10pF; Leaded Process Compatible:No
TVS Diode; Stand-Off Voltage, VRWM:5V; Breakdown Voltage, Vbr:6V; Peak Pulse Power PPK @ 8x20uS:300W; Capacitance, Cd:1.5pF; Package/Case:SOT-23-6; Breakdown Voltage Min:6V; Junction Capacitance:3pF; Leaded Process Compatible:No
TRANSIENT SUPPRESSOR DIODE ARRAY, UNIDIRECTIONAL, 3.3V V(RWM), SO
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| WF512K32-120G4TQ5A WF512K32-120G4TM5 WF512K32-120G |
EEPROM|FLASH|512KX32|HYBRID|QFL|68PIN|CERAMIC
EEPROM|FLASH|512KX32|HYBRID|QFP|68PIN|CERAMIC 的EEPROM | FLASH动画| 512KX32 |混合| QFP封装| 68PIN |陶瓷
|
SMSC, Corp.
|
| KM23C16205DSG |
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM(16M(1Mx16 /512Kx32) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DS1345YL-70-IND DS1345YP-70IND DS1345ABP-70IND |
128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 LOW PROFILE, SMT-34
1024k Nonvolatile SRAM with Battery Monitor 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
|
Maxim Integrated Products, Inc.
|
| DS1220 DS1220AB DS1220AB-100-IND DS1220AB-120-IND |
16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24
16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24
16k Nonvolatile SRAM 16K的非易失SRAM
M39012 MIL RF CONNECTOR 16K的非易失SRAM
|
Maxim Integrated Products, Inc.
HIROSE ELECTRIC Co., Ltd.
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
MAXIM - Dallas Semiconductor
|
| EDI7F33512V EDI7F433512V |
512Kx32 Flash(512Kx32 闪速存储器)
4x512Kx32 Flash(4x512Kx32 ???瀛???ī
|
White Electronic Designs Corporation
|
| DPS128X16A3-85M DPS128X16H3-85M DPS128X16H3-85B DP |
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CPGA50 CERAMIC, MODULE, SLCC, PGA-50
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQFP48 GULLWING, SLCC-48
256K X 8 MULTI DEVICE SRAM MODULE, 85 ns, CQIP48 SLCC-48
|
Twilight Technology, Inc.
|
