PART |
Description |
Maker |
EDI88512CA_LPA-B32 EDI88512CA_LPA-C EDI88512CA_LPA |
20ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 17ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 45ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 25ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 15ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 512Kx8 Monolithic SRAM SMD 5962-95600 512Kx8 Monolithic SRAM, SMD 5962-95600 SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R NTC Thermistor; Series:PANR; Thermistor Type:NTC; Resistance:1kohm; Beta:3500; Package/Case:Radial; Leaded Process Compatible:Yes; Mounting Type:Through Hole; R/T Curve:M; Terminal Type:Radial Leaded RoHS Compliant: Yes 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R 静态存储器 12MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP 静态存储器 55ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600
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White Electronic Designs ETC[ETC] Electronic Theatre Controls, Inc.
|
WMS512K8LV-100CME WMS512K8LV-85CME WMS512K8LV-85CM |
512Kx8 MONOLITHIC SRAM
|
WEDC[White Electronic Designs Corporation]
|
WMS512K8LV-70CCE WMS512K8LV-85DEIE WMS512K8LV-85DE |
512Kx8 MONOLITHIC SRAM 512Kx8整装静态存储器
|
PMC-Sierra, Inc. Pyramid Semiconductor, Corp.
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EDI88128C100CB EDI88128C EDI88128LP EDI88128P EDI8 |
70ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 128K X 8 STATIC RAM CMOS MONOLITHIC CAPACITOR 150UF 200V ELECT TSHA 128KX8 MONOLITHIC SRAM, SMD 5962-89598 128KX8整体式的SRAM,贴962-89598 CAPACITOR 560UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598 CAPACITOR 680UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598 CAPACITOR 270UF 200V ELECT TSHA 128KX8整体式的SRAM,贴962-89598 CAPACITOR 1200UF 200V ELECT TSHA 100ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 85ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
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White Electronic Designs N.A. ETC[ETC] Electronic Theatre Controls, Inc.
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EDI88130LPSNC EDI88130CSLM EDI88130CSLB EDI88130CS |
128Kx8 Monolithic SRAM, SMD 5962-89598 128Kx8 Monolithic SRAM SMD 5962-89598
|
ETC[ETC]
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WS512K8L-20CM WS512K8L-20CQA WS512K8-XCX WS512K8-2 |
512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, CDIP32 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CDIP32 512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CDIP32 512Kx8 SRAM MODULE, SMD 5962-92078
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WEDC[White Electronic Designs Corporation]
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K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM 512K X 8 STANDARD SRAM, 70 ns, PDIP32 512K X 8 STANDARD SRAM, 55 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic http://
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KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
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SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23C4000DTY KM23C4000DETY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
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SAMSUNG SEMICONDUCTOR CO. LTD.
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K6R4008C1C-C K6R4008C1C-C10 K6R4008C1C-C12 K6R4008 |
CMOS SRAM 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
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Samsung semiconductor
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K6T4008C K6T4008C1B K6T4008C1B-B K6T4008C1B-DB55 K |
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM RESISTOR 13K 1/16W 1 512K X 8 STANDARD SRAM, 55 ns, PDSO32
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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KM23C4100D KM23C4100DG SAMSUNGSEMICONDUCTORCO.LTD. |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位12Kx8 / 256Kx16)的CMOS掩模ROM分位12Kx8 / 256Kx16)的CMOS掩膜光盘
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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