| PART |
Description |
Maker |
| TH50VSF4682AASB TH50VSF4683AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| SST39VF3201-90-4I-EK SST39VF6401-90-4I-EK SST39VF1 |
10-Element Bar Graph Array
CAT5E PATCH CORD 100MHZ 4 FOOT WHITE
CAT5E PATCH CORD 30 FOOT BLACK
CAT5E PATCH CORD 100MHZ 1 FOOT WHITE
QF50 SRf DIN 41651 Std LoPro 34Ckt
CAT5E PATCH CORD 50 FOOT BLACK
LED Light Bars
CAT5E PATCH CORD 100MHZ 3 FOOT WHITE
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
SCOPEMETER 200MHz, 2.5GS/s,B/W with SCC kit, Z540 CALIBRATION RoHS Compliant: NA 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
CAT5E PATCH CORD 30 FOOT BLACK 4M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
KJL 41C 41#20 PIN RECP 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
|
Silicon Storage Technology, Inc.
PROM
SILICON STORAGE TECHNOLOGY INC
|
| MB84VA2007-10 MB84VA20 MB84VA2006 MB84VA2006-10 MB |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| SST39SF010A-45-4I-WH SST39SF020A-45-4I-WH SST39SF0 |
64 Mbit (x16) Multi-Purpose Flash Plus 128K X 8 FLASH 5V PROM, 45 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 45 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 5V PROM, 70 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
|
Silicon Storage Technology, Inc.
PROM
SILICON STORAGE TECHNOLOGY INC
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
| CE201210-6N8J CE201210-5N6J CE201210-4N7J CE201210 |
IC,MOT,MC68HC908GR8CP, DIP-28, MCU FLASH 8BIT 8MHZ 4K
IC,MCU,MC68HC908JB8ADW,8-BIT SOIC-28,21 I/O,3MHZ
IC,MCU,MC68HC711E9CFN2,8-BIT 2MHz,PLCC52
8-BIT, OTPROM, 2.1 MHz, MICROCONTROLLER, PDIP20
IC,MCU,MC68HC908KX8CDW,8-BIT SOIC-16,13 I/O,8MHZ
Multi-Layer Chip Inductors 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IC,MCU,MC68HC705C9ACFN,8-BIT PLCC-44,31 I/O,2MHZ 多层片式电感
Multi-Layer Chip Inductors 1 ELEMENT, 0.39 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
| TH50VSF2583AASB |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
Toshiba Semiconductor
|
| TH50VSF2583AASB TH50VSF2582 TH50VSF2582AASB |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA[Toshiba Semiconductor]
|
| TH50VSF3680 TH50VSF3681AASB TH50VSF368 |
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA[Toshiba Semiconductor]
|
| M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位（x16插槽，多银行，多层次，多突发28兆位闪存（突发）移动存储芯片.8V电源，多芯片封装
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| A82DL16X4T A82DL1624 A82DL1624TG-70 A82DL1624TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x4T(U) 16 Megabit (2Mx8 Bit/1Simultaneous Operation Flash Memory and 4M (256Kx16 Bit) S
|
AMICC[AMIC Technology]
|
| EN71PL032A0 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM
|
Eon Silicon Solution
|
|
