| PART |
Description |
Maker |
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| TSML1000 TSML1040 TSML1020 TSML1030 |
Extented Power IR Emitting Diode in SMD Package
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| LNA2802L |
GaAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
|
| SE2460 |
GaAs Infrared Emitting Diode
|
Honeywell Solid State E...
|
| KELD001 |
Infrared Emitting Diode(GaAs)
|
KODENSHI KOREA CORP.
|
| 1N6265 |
GaAs INFRARED EMITTING DIODE
|
FAIRCHILD[Fairchild Semiconductor]
|
| SEP8506 |
GAAS INFRARED EMITTING DIODE
|
Honeywell Solid State Electronics Center
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
