| PART |
Description |
Maker |
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| M29W640D M29DW323 |
Excalibur High-Speed Low-Power Precision Quad Operational Amplifier 16-SOIC
FLASH NOR HIGH DENSITY & CONSUMER
|
ST Microelectronics
意法半导
STMicroelectronics
|
| BCM6410 BCM6410IPB BCM6420 BCM6420IPB |
LOW POWER HIGH DENSITY CENTRAL OFFICE ADSL SOLUTION 低耗能，高密度局端ADSL解决方案
|
Electronic Theatre Controls, Inc.
ETC
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SD10-100-R SD10-150-R SD10-151-R SD10-1R5-R SD10-4 |
SD Series High Power Density, Low Profile, Shielded Inductors
SD Series High Power Density, Low Profile, Shielded Inductors
|
Cooper Bussmann, Inc.
|
| CBRLDSH2-40 CBRLDSH2-40-15 |
SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER
|
Central Semiconductor C...
|
| HC3-1R0-R HC3-2R2-R HC3-3R3-R HC3-4R7-R HC3-5R6-R |
High Density, high current/low voltage applications
|
Cooper Bussmann, Inc.
|
| A0710BTB1 A07 A0750BTB1 A0710BAB1 A0710BBB1 A0710B |
LOW PROFILE HIGH DENSITY IDC SOCKET
|
DBLECTRO[DB Lectro Inc]
|
| A1530BT1 A1580BT1 A15 A15100BA1 A15100BB1 A15100BC |
LOW PROFILE HIGH DENSITY DIP PLUG
|
DBLECTRO[DB Lectro Inc]
|
| STP40N03L-20 4886 |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMicroelectronics
|
