| PART |
Description |
Maker |
| IS61NVVP51236-200BI IS61NVVP51236-250B IS61NVVP512 |
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 3 ns, PBGA119
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 2.6 ns, PBGA119
|
Integrated Silicon Solution, Inc.
|
| AS7C3256PFS18A-4TQC AS7C3256PFS16A-4TQC AS7C3256PF |
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 166 MHz
256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STANDARD SRAM, 3.8 ns, PQFP100
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
|
Alliance Semiconductor, Corp.
ALLIANCE SEMICONDUCTOR CORP
|
| IS61NLF25636 IS61NLF25632 IS61NLF51218 IS61NF25632 |
512K x 18 flow-through no wait state bus sram
256K x 32 flow-through no wait state bus sram
256K x 36 flow-through no wait state bus sram
|
ISSI[Integrated Silicon Solution Inc]
ISSI[Integrated Silicon Solution, Inc]
|
| IS61NVF25636A IS61NVF25636A-6.5B2 IS61NVF25636A-6. |
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS61LPD51218T_D IS61LPD25636T_D IS61SPD51218T_D IS |
512K x 18 synchronous pipeline, double-cycle deselect static RAM
256K x 32 synchronous pipeline, double-cycle deselect static RAM
256K x 36 synchronous pipeline, double-cycle deselect static RAM
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| IS61NF25618-10TQ IS61NF25618-10B IS61NF25618-10TQI |
256K x 18 flow-through no wait state bus sram
128K x 32 flow-through no wait state bus sram
128K x 36 flow-through no wait state bus sram
|
Integrated Silicon Solution Inc
|
| W5232 W523X W5231 W5233 W5234 |
Power Speech LOW VOLTAGE ADPCM VOICE SYNTHESIZER
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (6 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (12 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (9 seconds @6.7K)
ADPCM Synthesizer w/ 4 triggers, STA, STB, STC, R0 (3 seconds @6.7K)
|
WINBOND[Winbond]
Winbond Electronics
|
| IDT29FCT520C IDT29FCT520BSOB IDT29FCT520BSO IDT29F |
MULTILEVEL PIPELINE REGISTER 8-BIT, DSP-PIPELINE REGISTER, CQCC28
MULTILEVEL PIPELINE REGISTER 8-BIT, DSP-PIPELINE REGISTER, CDIP24
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| AS7C33128PFD36A-166TQI AS7C33128PFD32A AS7C33128PF |
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 150MHz
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 133MHz
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 100MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 166MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 150MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 133MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 100MHz
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor Corp...
|
| MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器)
4分（12k × 8/256K × 16）位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
|
Fujitsu Limited
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
