PART |
Description |
Maker |
IPP08CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSC032N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSC059N03S |
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
IPF12N03LBG |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages OptiMOS2 Power-Transistor OptiMOS2功率晶体 30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
BSO350N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 35mOhm, 6.0A, LL, dual OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSR202N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSL202SN |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSB024N03LXG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
BSC052N03S |
OptiMOS2 Power-Transistor
|
Infineon Technologies A...
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|