| PART |
Description |
Maker |
| H15R1203 |
Reverse conducting IGBT
|
Infineon Technologies
|
| IHY20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW20N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N160R2 |
TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IKW40N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| 5SHX03D6004 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| FGR3000FX-90DA |
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| STGP7NB60F STGD7NB60FT4 STGD7NB60F |
14 A, 600 V, N-CHANNEL IGBT, TO-220AB
Transient Surge Protection Thyristor; Thyristor Type:Sidac; Package/Case:MS-013; Reel Quantity:1500; Repetitive Reverse Voltage Max, Vrrm:58V; Capacitance:70pF; Forward Voltage:5V; Holding Current:120mA; Leakage Current:5uA RoHS Compliant: NA
N-CHANNEL 7A 600V TO-220/DPAK POWERMESH IGBT
N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
