| PART |
Description |
Maker |
| TLN107A E006145 |
INFRARED LED GaAS INFRARED EMITTER
From old datasheet system
INFRARED LED FOR PHOTO INTERRUTER
|
TOSHIBA[Toshiba Semiconductor]
|
| STS7103 |
Infrared LED, 3.9 mm, 1 ELEMENT, INFRARED LED, 950 nm, HERMETIC SEALED, TO-18, 2 PIN
|
Vishay Semiconductors
|
| MLED930 |
Infrared LED 3.68 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| TLP1001A E006217 PLP1000A PLP1001A P1001A P100A TL |
THSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC THSHIBA光电断路器红外LED相机芯片
From old datasheet system
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 19200X50 19200250 19200350 |
LED Indicator 8mm Infrared LED with optic
|
Chicago Miniature Lamp,inc
|
| 19200000 |
LED Indicator 8mm Infrared LED with Optic
|
Chicago Miniature Lamp,inc
|
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| OP290 OP290A OP290B OP290C OP291A OP291B OP291C OP |
4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK Technologies
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm
AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
