| PART |
Description |
Maker |
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| M471B5273DH0 |
204pin Unbuffered SODIMM
|
Samsung
|
| M464S1724ETSNBSP M464S0924E M464S0924ETS M464S0924 |
64MB / 128MB Unbuffered SODIMM
64MB 128MB Unbuffered SODIMM
64MB, 128MB Unbuffered SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V43648Z04VCTG-75 |
3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V826664G24S |
512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
http://
|
| V436664Z24VG-75PC V436664Z24V V436664Z24VG-10PC V4 |
512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M x 64 3.3 VOLT
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V43644Y04VTG-10PC |
3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM
|
Mosel Vitelic, Corp.
|
| V43648Y04VCTG-10PC |
3.3 VOLT 8M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| VL-MM7-2SBN |
2GB 256Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN
|
List of Unclassifed Manufacturers
|
| M2N2G64TU8HG4B M2N1G64TUH8G5F |
Unbuffered DDR2 SO-DIMM
|
Nanya
|
| M378T3253FGZ3-CE6 M378T3253FGZ3-CE6_D5_CC M378T325 |
DDR2 Unbuffered SDRAM MODULE
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
