| PART |
Description |
Maker |
| CPD07 |
Chip Form: RECTIFIER CHIP
General Purpose Rectifier 8 Amp Glass Passivated Rectifier Chip
|
Central Semiconductor Corp
|
| BU323A BU323 |
10 A N-P-N monollithic darlington power transistor. 350 V. 175 W. Gain of 150 at 6 A.
10-Ampere N-P-N Monolithic Darlington Power Transistors
|
General Electric Solid State
GESS[GE Solid State]
|
| MJE5742 MJE5740 MJE5740-D |
Power 8A 400V Darlington NPN
Power 8A 300V Darlington NPN
NPN Silicon Power Darlington Transistors
|
ON Semiconductor
|
| B40C5000-300006 B80C5000-3000 B380C5000-3000 B125C |
Polarized Power Relay, 1 Form A 1 Form B, 8A 250VAC 5A 30VDC, 1 Coil Latching 3.5 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE
Silicon-Bridge Rectifiers
|
Semikron International
|
| CP208 |
Power Transistor NPN - Amp/Switch Transistor Chip
Chip Form: AMP/SWITCH POWER TRANSISTOR
|
Central Semiconductor Corp
|
| CP667 |
Chip Form: SATURATED SWITCH TRANSISTOR
|
Central Semiconductor
|
| MB89P485 |
Single-Chip MCU Data Release Form (AH)
|
FUJITSU
|
| CP23010 |
Power Transistor NPN - Silicon Darlington Transistor Chip
|
Central Semiconductor Corp
|
| CP617 |
Small Signal Transistor PNP - Silicon RF Transistor Chip
Chip Form: RF TRANSISTOR
|
Central Semiconductor Corp
|
| FTR-F2AK005T FTR-F2AK024T FTR-H2AK024T FTR-B2NA4.5 |
4 Pole (2 FORM C 2 FORM A) Signal Relay for Central Switching/ Data Transmission
|
Fujitsu Component Limited.
|
