PART |
Description |
Maker |
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
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Motorola, Inc. ON Semiconductor
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SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门)) TMOS POWER FET 14 AMPERES From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State GE Solid State
|
H03N60 H03N60F H03N60E |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelect... HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelectronics Corp.
|
H06N60 TO-220AB TO-263 TO-220FP |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
|
TO-220AB TO-220FP TO-263 |
N-Channel Power Field Effect Transistor
|
HSMC CORP.
|
PSMN008-75P PSMN008-75B |
N-channel enhancement mode field-effect transistor 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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