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GS881E18BD-200 - 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs

GS881E18BD-200_622847.PDF Datasheet

 
Part No. GS881E18BD-200 GS881E18BD-250I GS881E18BT-333 GS881E18BT-333I GS881E18BT-250 GS881E18BT-250I GS881E36BT-333I GS881E18BD-150 GS881E18BD-200I GS881E18BD-250 GS881E18BD-300 GS881E18BD-300I GS881E18BD-333 GS881E18BD-333I GS881E18BGD-150 GS881E18BGD-150I GS881E18BGD-200 GS881E18BGD-200I GS881E18BGD-250 GS881E18BGD-250I GS881E18BGD-300 GS881E18BGD-300I GS881E18BGD-333 GS881E18BGD-333I GS881E18BGT-150 GS881E18BGT-150I GS881E18BGT-200 GS881E18BGT-200I GS881E18BGT-2300I GS881E18BGT-250 GS881E18BGT-250I
Description 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs

File Size 595.50K  /  40 Page  

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 Full text search : 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs


 Related Part Number
PART Description Maker
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
IS61NP25632 IS61NP25636 IS61NP51218 IS61NP25632-5T 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PQFP100
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PQFP100
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K × 3256K × 36和管道为512k × 18编号WAIT状态总线的SRAM
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
GSI Technology, Inc.
Molex, Inc.
GS881E18BD-200IV GS881E36BGT-200V 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 6.5 ns, PQFP100
GSI Technology, Inc.
HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
SIEMENS AG
IS61NLP51218 IS61NP51218 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
Integrated Silicon Solu...
GS88136AD-150 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
GSI Technology, Inc.
CY14B104L-BV45XIT CY14B104N-BV45XCT CY14B104N-BV45 4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO44
4-Mbit (512K x 8/256K x 16) nvSRAM 256K X 16 NON-VOLATILE SRAM, 15 ns, PDSO54
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
GS88032CT-250 GS88036CT-250 GS88018CT-250 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GSI Technology
IDT71V65602S-100BQI IDT71V65802S-100BQI IDT71V6580 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K × 3612K采样× 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 36 ZBT SRAM, 4.2 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
3.3V 256K X 36 ZBT Synchronous 2.5V I/O PipeLined SRAM
3.3V 512K x 18 ZBT Synchronous 2.5V I/O PipeLined SRAM
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
GS88132BGD-150IV GS88118BD-200IV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
GSI Technology, Inc.
 
 Related keyword From Full Text Search System
GS881E18BD-200 Operation GS881E18BD-200 applications GS881E18BD-200 Drain GS881E18BD-200 Dual GS881E18BD-200 EEprom
GS881E18BD-200 Table GS881E18BD-200 supply GS881E18BD-200 semicon GS881E18BD-200 Reference GS881E18BD-200 rail
 

 

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