PART |
Description |
Maker |
GS74116A GS74116ATP-10 GS74116AJ-12I GS74116AJ-12I |
256K X 16 STANDARD SRAM, 7 ns, PDSO44 256K x 16 4Mb Asynchronous SRAM 256K × 16 4Mb的异步SRAM RES, MTF 20K 1/4W 2% ER 16C 16#16 SKT PLUG ER 13C 3#8 3#12 7#16 SKT PLUG 10ns 256K X 16 4Mb Asynchronous SRAM 256K X 16 STANDARD SRAM, 7 ns, PBGA48
|
SRAM Electronic Theatre Controls, Inc. GSI[GSI Technology] N.A. ETC
|
GS76024B-15I GS76024B-10 GS76024B-10I GS76024B-12 |
6Mb56K x 24Bit)Asynchronous SRAM(6M位(256K x 24位)异步静态RAM) 256K x 24 6Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
N08T1630CXB |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
N08L163WC1CT1-55IL N08L163WC1C N08L163WC1CT1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
N08L63W2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
|
ON Semiconductor
|
N08L63W2AB27I N08L63W2AB27IT N08L63W2AB7I N08L63W2 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
|
ON Semiconductor
|
MT58L512L18F MT58L256L32F MT58L256V32F MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
GS88118T-11.5 GS88118T-11.5I GS88118T-100 GS88118T |
512K x 18, 256K x 36 ByteSafe⑩ 8Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
MT58L256L36D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
|
Micron Technology
|
GS880Z36T-100 GS880Z36T-11I GS880Z36T-100I GS880Z3 |
8Mb Pipelined and Flow Through Synchronous NBT SRAMs 256K X 36 ZBT SRAM, 11 ns, PQFP100 256K X 36 ZBT SRAM, 18 ns, PQFP100 TQFP-100
|
GSI Technology, Inc. http://
|
MCM6343 MCM6343TS12 MCM6343TS15 MCM6343YJ12 MCM634 |
256K x 15 Bit 3.3 V Asynchronous Fast Static RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44 256K x 15 Bit 3.3 V Asynchronous Fast Static RAM 256K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|