| PART |
Description |
Maker |
| MCSO1HV/C MCSO1V/TBE |
3.3V CMOS Oscillator Mil Temp
|
Golledge Electronics Ltd.
|
| MCSOF MCSOF_TBE MCSOF_A MCSOF/A MCSOF/TBE MCSOF/AE |
CRYSTAL OSCILLATOR, CLOCK, 72 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 49.152 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 40.6 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 125 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 132.7104 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 100 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 144 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 64 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 160 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 40 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 48 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 44.2368 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 110.592 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 102.4 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 128 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 117.946 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 150 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 104 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 108 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 131.072 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 40.96 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 50.75 MHz, CMOS OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 60.9 MHz, CMOS OUTPUT
5V CMOS Oscillator Low Jitter
|
Golledge Electronics, Ltd.
GOLLEDGE[Golledge Electronics Ltd]
|
| CC4V-T1M CC4V CC4V-T1A |
SM Watch Crystal Mil Temp
|
GOLLEDGE[Golledge Electronics Ltd]
|
| CC6F-T1A CC6F-T1M CC6F |
SM Crystal Mil Temp High Freq Fundamental
|
GOLLEDGE[Golledge Electronics Ltd]
|
| CC1F-T1A CC1F-T1M CC1F |
SM Crystal Mil Temp High Freq Fundamental
|
GOLLEDGE[Golledge Electronics Ltd]
|
| AD203 |
Rugged Mil Temp Range Isolation Amplifier
|
Analog Devices
|
| ATV5100-30UM |
30NS, PGA, MIL TEMP(EPLD) UV PLD, 35 ns, CPGA68
|
Atmel, Corp.
|
| AM29LV400B-100WAC AM29LV400B-100WACB AM29LV400B-10 |
PTSE 6C 6#20 SKT RECP
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Metal; Series:MS C-26482 Series I; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Cable Receptacle RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3120; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
FEEDTHRU CAPACITOR, 470PF 4A 100VFEEDTHRU CAPACITOR, 470PF 4A 100V; Capacitance:0.47nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp,
CAP 0.47UF 50V 50-20% X7R SMD-0612 TR-7 PLATED-NI/SN HC-FEEDTHRU
PTSE 3C 3#20 PIN RECP
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 150 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| PUMA67S16000M-025 PUMA2S16000I-45 PUMA67S16000I-45 |
150NS, PLCC, COM TEMP(FLASH)
15NS, 44 PLCC, COM TEMP(EPLD)
30MHZ, 3.3V, 8 LAP, COM TEMP(FPGA)
20NS, 44 PLCC, COM TEMP(EPLD)
150NS, TSOP, IND TEMP(FLASH)
20NS, 44 TQFP, IND TEMP(EPLD)
120NS, SOIC, IND TEMP(EEPROM)
70NS, TSOP, IND TEMP(EEPROM)
15NS, 68 PLCC, IND TEMP(EPLD)
25NS, 68 PLCC, IND TEMP(EPLD)
30MHZ, 32 TQFP, COM TEMP(FPGA)
120NS, PDIP, IND TEMP(EEPROM)
32 MCROCELL CPLD 1.8V ISP TQFP IND GREEN(EPLD)
x32 SRAM Module X32号的SRAM模块
90NS, TSOP, IND TEMP(EEPROM) X32号的SRAM模块
120NS, PLCC, IND TEMP(EEPROM)
|
DB Lectro, Inc.
TE Connectivity, Ltd.
|
| HSP45106 HSP45106GC-33 HSP45106JC-25 HSP45106JC-33 |
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; Number of Contacts:21; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
16-Bit Numerically Controlled Oscillator DSP-NUM CONTROLLED OSCILLATOR, PQCC84
16-Bit Numerically Controlled Oscillator 16-BIT, DSP-NUM CONTROLLED OSCILLATOR, CPGA85
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 5962D9960601QUA 5962D9960601QUC 5962D9960601QUX 59 |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose none.
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish factory option.
512K x 8 SRAM. 100ns access time, 5V operation. Extended industrial temp rang flow. Lead finish gold.
|
Aeroflex Circuit Technology
|
| OT7602C1 OT7602C1_A OT7602C1/A OT7602C132.768KHZ O |
CRYSTAL OSCILLATOR, CLOCK, 0.032768 MHz, CMOS OUTPUT
SM CMOS Oscillator Low Power
|
Golledge Electronics, Ltd.
GOLLEDGE[Golledge Electronics Ltd]
|
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