PART |
Description |
Maker |
MAAP-000076-PKG001 MAAP-000076-SMB001 MAAP-000076- |
Amplifier, Power, 16W 1.3-2.5 GHz
|
http:// MACOM[Tyco Electronics]
|
DER-51 |
16W Power Supply using TOP243P
|
POWERINT[Power Integrations, Inc.]
|
APV-1612 APV-16-12 APV-16-15 APV-16-24 APV-16-5 |
16W Single Output Switching Power Supply
|
Mean Well Enterprises Co., Ltd. Mean Well Enterprises C...
|
PCD-16-1400 PCD-16-350 PCD-16-1050 PCD-16-700 |
16W Single Output AC Dimmable LED Power Supply
|
Mean Well Enterprises Co., Ltd.
|
K6T4008C K6T4008C1B K6T4008C1B-B K6T4008C1B-DB55 K |
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM RESISTOR 13K 1/16W 1 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MGFC42V5964 |
5.9-6.4 GHz Band 16W Internally Matched GaAs FET 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V5867 MGFC42V586712 |
5.8`6.75GHz BAND 16W INTERNALLY MATCHED GaAs FET 5.8~6.75GHZ BAND 16W INTERNALLHY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
MBR2560CT MBR2550CT MBR2545CT MBR2535CT |
RES,274 OHM,1/16W,1%,0603 SCHOTTKY RECTIFIER
|
GE Security, Inc. GE[General Semiconductor]
|
MGFC42V374204 MGFC42V3742 |
3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|