PART |
Description |
Maker |
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
CM100DU-24NFH |
MITSUBISHI IGBT MODULES
|
Mitsubishi Electric Corporation
|
CR6PM-12 CR6PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
CR8PM-12 CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
MID100-12A3 MID200-12A4 |
IGBT Modules 135 A, 1200 V, N-CHANNEL IGBT IGBT Modules - Short Circuit SOA Capability Square RBSOA 270 A, 1200 V, N-CHANNEL IGBT
|
IXYS, Corp.
|
VIO50-12P1 VII50-12P1 VDI50-12P1 VID50-12P1 |
IGBT Modules: Boost Configurated IGBT Modules From old datasheet system
|
IXYS[IXYS Corporation]
|
VID75-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID25-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
PM200RSA06002 |
MITSUBISHI INTELLIGENT POWER MODULES
|
Mitsubishi Electric Semiconductor
|
PM75RSE060 |
From old datasheet system MITSUBISHI INTELLIGENT POWER MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
QM150DY-HBK |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|