| PART |
Description |
Maker |
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| AM29SL800DT90EI AM29SL800DT90WCC AM29SL800DT90WAC |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 120 ns, PBGA48
|
Advanced Micro Devices, Inc.
|
| EM681FV16A |
512K x 16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM680FU16 |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| BS616LV8015BI BS616LV8015 BS616LV8015BC |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| WS628512LLT-70 WS628512LLST-70 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
|
永盛国际集团
|
| DSK6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| K6F8016R6BFAMILY |
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| BS62LV4000 BS62LV4000STI BS62LV4000TC BS62LV4000TI |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
| A81L801UG-70IF A81L801 A81L801TG-70 A81L801TG-70F |
Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
|
AMICC[AMIC Technology]
|
| MX27L4000MI-25 MX27L4000MI-20 MX27L4000QC-25 MX27L |
OSCILLATOR 29.4989MHZ SMD
4M-BIT [512K x8] LOW VOLTAGE OPERATION CMOS EPROM
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
