| PART |
Description |
Maker |
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
| THMY641661BEG-100 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块)
16M Word x 64 Bit Synchronous DRAM Module(16M瀛?x 64浣??姝ュ???AM妯″?)
|
Toshiba Corporation
|
| HY57V561620CLTP-6I HY57V561620CT-SI HY57V561620CLT |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
SDRAM - 256Mb
|
HYNIX SEMICONDUCTOR INC
|
| AS4SD16M72PBG-10_ET AS4SD16M72PBG-10_IT AS4SD16M72 |
16M x 72, SDR SDRAM MCP
16M X 72 SYNCHRONOUS DRAM, PBGA219 PLASTIC, PBGA-219
|
http://
Austin Semiconductor, Inc
Micross Components
|
| HY57V561620 HY57V561620LT-8 HY57V561620LT-P HY57V5 |
4Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| KM48S16030A KM48S16030AT-G_F10 KM48S16030AT-G_FA K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Electronic Theatre Controls, Inc.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYB25L256160AC-7.5 HYB25L256160AF-7.5 |
16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, PLASTIC, TFBGA-54
16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, GREEN, PLASTIC, TFBGA-54
|
Infineon Technologies AG
|
| UPD4516161A |
16M Bit Synchronous DRAM
|
NEC
|
| W9825G6CH-6 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
WINBOND ELECTRONICS CORP
|
