| PART |
Description |
Maker |
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| APT4020BVFRG |
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi, Corp.
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| NPC50-100G-50R0G NPC50-50G-50R0F NPC50-50G-50R0J N |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 12400 MHz 100 ohm RF/MICROWAVE TERMINATION
0 MHz - 400 MHz 50 ohm RF/MICROWAVE TERMINATION
0 MHz - 400 MHz 100 ohm RF/MICROWAVE TERMINATION
0 MHz - 2500 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Marktech Optoelectronics
Ecliptek, Corp.
Daishinku, Corp.
Electronic Theatre Controls, Inc.
飞思卡尔半导体(中国)有限公司
Pulse Engineering, Inc.
HIROSE ELECTRIC Co., Ltd.
|
| RK73B1JLTPD3R9G RK73B2ALTPD3R9G |
RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 2 %, 400 ppm, 3.9 ohm, SURFACE MOUNT, 0603 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 2 %, 400 ppm, 3.9 ohm, SURFACE MOUNT, 0805 CHIP
|
KOA Speer Electronics,Inc.
|
| IRF730 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| SIHF740STRL-GE3 |
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| SIHF730A-E3 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| RFP8P10 |
8A, 100V, 0.400 Ohm, P-Channel Power MOSFET
|
Fairchild Semiconductor
|
| FDP13N40 |
13 A, 400 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRFR310 |
1.7 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
VISHAY INTERTECHNOLOGY INC
|
| IRF730 |
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY INTERTECHNOLOGY INC
|
|
