| PART |
Description |
Maker |
| M36W0R5020B0 M36W0R5020B0ZAQ M36W0R5020B0ZAQE M36W |
32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package
|
http://
STMicroelectronics
ST Microelectronics
|
| M29W160EB70N1 M29W160EB70N1T M29W160EB70N6 M29W160 |
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位（含2Mb x8兆x16插槽，引导块3V电源快闪记忆
CAP 3300UF 6.3V ELECT FC RADIAL 16兆位（含2Mb x8兆x16插槽，引导块V电源快闪记忆
16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
70ns; V(in/out): -0.6 to 0.6V; 16Mbit (2Mb x 8 or 1Mb x 16, boot block) 3V supply flash memory
|
STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
|
| M48Z128V |
5.0V OR 3.3V / 1 Mbit (128 Kbit x 8) ZEROPOWER SRAM
|
ST Microelectronics
|
| M59DR032A M59DR032B M59DR032A120ZB1T M59DR032A100Z |
2M X 16 FLASH 1.8V PROM, 120 ns, PBGA48
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory 32兆位Mb x16插槽，双行，第低压闪
32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
|
http://
NUMONYX
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M27W032-110N1T M27W032 M27W032-100M1T M27W032-100N |
32 Mbit 2Mb x16 3V Supply FlexibleROM Memory
16 Mbit 1Mb x16 3V Supply FlexibleROM Memory
32 Mbit 2Mb x16 3V Supply FlexibleROM⑩ Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M28W320CT M28W320CT100GB1T M28W320CT100GB6T M28W32 |
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory
32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M36DR432DA10ZA6T |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
http://
|
| M36W432 M36W432B M36W432B70ZA1T M36W432B70ZA6T M36 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M69AR048B M69AR048BL80ZB8 M69AR048BL85ZB8 |
32 Mbit (2Mb x16) 1.8V Asynchronous PSRAM
|
STMicroelectronics
|
| C4123 C5334 C4124 C4133 C4323 C4134 C4324 C3323 C1 |
MEMS digital output motion sensor ultra low-power high performance 3-axes "nano" accelerometer
18-STAGE STATIC SHIFT REGISTER
MEMS digital output motion sensor ultra low-power high performance 3-axes nano accelerometer
MEMS inertial sensor 3-axis ultracompact linear accelerometer
MEMS inertial sensor: 3-axis - ± 2g/± 6g digital output low voltage linear accelerometer
LOW DROP POWER SCHOTTKY RECTIFIER
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM, anticollision and anti-clone functions
Memory tag IC at 13.56 MHz, with 64-bit unique ID and WORM user area, ISO 15693 and ISO 18000-3 Mode 1 compliant
13.56 MHz short-range contactless memory chip with 4096-bit EEPROM and anticollision functions
13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
Turbo 2 ultrafast high voltage rectifier
5V, 16Kbit (2Kb x 8) ZEROPOWER SRAM
Dual decade counter
3.3V, 256Kbit (32Kbit x 8) ZEROPOWER® SRAM
Analog multiplexer/demultiplexer with address latch : single 8 channel
5.0V or 3.3V, 1 Mbit (128 Kbit x 8) ZEROPOWER® SRAM
TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Quad bilateral switch
5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER® SRAM
Dual J-K flip flop with preset and clear
4-bit magnitude comparator
2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and Password, ISO15693 and ISO18000-3 Mode 1 compliant
MEMS inertial sensor: 3-axis - /-2g/6g ultracompact linear accelerometer 光电
432-bit UHF, EPCglobal Class1 Generation2 and ISO 18000-6C, contactless memory chip with user memory 光电
|
NXP Semiconductors N.V.
STMicroelectronics N.V.
|
| M27W032 |
32 MBIT (2MB X16) 3V SUPPLY FLEXIBLEROM?MEMORY
|
ST Microelectronics
|
