| PART |
Description |
Maker |
| MX27C512 MX27C512PC-12 MX27C512PC-15 MX27C512PC-45 |
Single Output LDO, 50mA, Fixed(3.2V), Low Quiescent Current, Thermal Protection 5-SOT-23 12k位[64Kx8]的CMOS存储
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDSO28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 45 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 120 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 12-SOP 64K X 8 OTPROM, 55 ns, PDIP28
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| BA8291 |
8bits Serial-In Parallel-Out Driver
|
Rohm
|
| TC554001FTL-85L TC554001FL-10L TC554001FTL-10L |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC55V16366FF-133 |
512K Word x 36 Bit Synchronous Pipelined Burst Static RAM(512K 字x 36位同步管道脉冲静RAM)
|
Toshiba Corporation
|
| TC55VD818FF-150 TC55VD818FF-133 TC55VD818FF-143 |
512K Word x 18 Bit Synchronous No-turnround Static RAM(512K 字x18位同步无转向静RAM) 12k字18位同步无具体时间的静态存储器（为512k字x18位同步无转向静态内存）
|
Toshiba Corporation
Toshiba, Corp.
|
| AT24C64A AT24C64A-10PI-1.8 AT24C64A-10PI-2.7 AT24C |
32/64K, 2-Wire Bus Serial EEPROM w/Cascadable Features, Full Write Protect and high speed at medium voltage.
2-Wire Serial EEPROM 32K (4096 x 8) 64K (8192 x 8)
|
ATMEL[ATMEL Corporation]
|
| AT49BV512-12JC AT49BV512-12JI AT49BV512-12PC AT49B |
512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory 64K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| LC62F0164A |
16-Bit Single-Chip Microcontroller with On-Chip 64K-Word Flash EEPROM and 1K-Word RAM
|
SANYO[Sanyo Semicon Device]
|
| D2364 UPD2364 UPD2364-30PC UPD2364-35PC UPD2364-45 |
Search -> UPD2364
ROM 8192 words / 8-Bit
READ ONLY MEMORY 8192 WORDS, 8BITS/WORD
|
NEC Electronics
NEC Corp.
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| CAT24WC64J1.8TE13B CAT24WC64PTE13B CAT24WC32PTE13B |
32K/64K-Bit I2C Serial CMOS EEPROM
32K/64K-Bit I2C Serial CMOS E2PROM
Serial CMOS EEPROM, Full Array Write Protect, 32Kb
4K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
CATALYST[Catalyst Semiconductor]
|
| LH53517 |
CMOS 512K (64K x 8) MROM
|
Sharp Corporation
Sharp Electrionic Components
|
