| PART |
Description |
Maker |
| IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
|
IRF[International Rectifier]
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| IRF5N3710 |
100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.028ohm, Id=45A)
|
IRF[International Rectifier]
|
| IRFG5110 IRFG5110P IRFG5110N IRFG5110-15 |
Simple Drive Requirements
100V, Combination 2N-2P-CHANNEL
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| FQB19N10L FQI19N10L FQB19N10LTM |
100V Logic N-Channel MOSFET(漏源电压00V的逻辑N沟道增强型MOS场效应管) 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
100V N-Channel Logic Level QFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQT7N10 FQT7N10TF |
100V N-Channel MOSFET 1.7 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
100V N-Channel QFET
|
Fairchild Semiconductor, Corp.
|
| HUF76633S3S HUF76633P3 FN4693 HUF76633P3T |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-220AB
38A, 100V, 0.036 Ohm, N-Channel, Logic 38A, 100V, 0.036 Ohm, N-Channel, Logic
From old datasheet system
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| IRF5EA1310 |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.036ohm, Id=23A)
THRU-HOLE MOUNT (LCC-28) 100V, N-CHANNEL
|
IRF[International Rectifier]
|
| IRHY597130CM IRHY593130CM |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 12.5A I(D) | TO-257AA
|
IRF[International Rectifier]
|
| STQ1NE10L STQ1NE10L-AP |
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFETPOWER MOSFET
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET POWER MOSFET
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET⑩ POWER MOSFET
|
意法半导
STMicroelectronics
ST Microelectronics
|
