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CHR - 10 MEG TO 100 MEG, 1 TOLERANCE, TEMPERATURE COEFFICIENT TO AS LOW AS 25 PPM/C

CHR_574699.PDF Datasheet

Part No.

CHR CHR2520FC-10MEG-1 CHR2520FC

Description

10 MEG TO 100 MEG, 1 TOLERANCE, TEMPERATURE COEFFICIENT TO AS LOW AS 25 PPM/C

File Size

360.72K / 1 Page

Maker

RHOPOINT[RHOPOINT COMPONENTS]

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: CH01001

Maker: TOSHIBA(东芝)

Pack: DIP

Stock: 43

Unit price for :

50: $5.65

100: $5.37

1000: $5.08

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Full text search : 10 MEG TO 100 MEG, 1 TOLERANCE, TEMPERATURE COEFFICIENT TO AS LOW AS 25 PPM/C

Product Description search : 10 MEG TO 100 MEG, 1 TOLERANCE, TEMPERATURE COEFFICIENT TO AS LOW AS 25 PPM/C

Related Part Number

PART	Description	Maker
CHR CHR2520FC-10MEG-1	10 Meg to 100 Meg, 1 Tolerance, Temperature Coefficient to as low as 25 ppm/C	Rhopoint Components Ltd.
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MT41J64M16JT MT41J128M8 MT41J256M4 MT41J64M16JT-12	DDR3 SDRAM MT41J256M4 ?32 Meg x 4 x 8 banks MT41J128M8 ?16 Meg x 8 x 8 banks MT41J64M16 ?8 Meg x 16 x 8 banks	Micron Technology
MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A	SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks	Micron Technology
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MT4LDT464AG MT4LDT264AG MT4LDT164AG	4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64无缓冲动态RAM双列直插存储器模 1 Meg x 64 Nonbuffered DRAM DIMMs(1M x 64无缓冲动态RAM双列直插存储器模 1梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块 2 Meg x 64 Nonbuffered DRAM DIMMs(2M x 64无缓冲动态RAM双列直插存储器模 2梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块	Micron Technology, Inc.
IDT71V416VL IDT71V416VS15YGI IDT71V416VL10BEG IDT7	From old datasheet system 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PDSO44 Transformers Only Module 3.3V的CMOS静态RAM 4梅格56K x 16位） 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位） 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44	IDT[Integrated Device Technology] Integrated Device Technology, Inc.
AS4LC4M16DG-6S_XT AS4LC4M16 AS4LC4M16DG-5S_IT AS4L	4 MEG x 16 DRAM	AUSTIN[Austin Semiconductor]
MT4LC4M16N MT4LC4M16R MT4LC4M16R6 MT4LC4M16R6TG-6S	4 MEG x 16 EDO DRAM	MICRON[Micron Technology]
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