| PART |
Description |
Maker |
| M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器
Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器
From old datasheet system
4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http://
STMicroelectronics
|
| M48T512V M48T512V-70PM1 M48T512V-85PM1 M48T512VPM |
3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM
|
STMicroelectronics
ST Microelectronics
意法半导
|
| M48T512V M48T512Y M48T512Y-85PM1 M48T512V-70PM1 M4 |
3.3V-5V 4 MBIT 512KB X8 TIMEKEEPER SRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics
NUMONYX
意法半导
ST Microelectronics
|
| M58BW016 M58BW016BB M58BW016BT |
16 MBIT (512KB X32, BOOT BLOCK, BURST) 3V SUPPLY FLASH MEMORIES
|
ST Microelectronics
|
| M29F800D |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 5V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
| M29W400DT45N1 M29W400DT45N6E M29W400DT55M1 M29W400 |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29W800DB |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
STMicroelectronics
|
| M50FW040N M50FW040N5T M50FW040N1 M50FW040N1T M50FW |
4 MBIT 512KB X8, UNIFORM BLOCK 3V SUPPLY FIRMWARE HUB FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W800DB90N1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
