| PART |
Description |
Maker |
| K4X56163PG-FE K4X56163PG-FG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| K4X56163PE-LG K4X56163PE K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| EMD12324P EMD12324P-60 EMD12324P-75 |
512M: 16M x 32 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| K4X51163PC-FE K4X51163PC-LE |
32M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| MT46H16M32LG MT46H32M16LF MT46H32M16LFBF-6ITC MT46 |
512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
|
Micron Technology
|
| V53C1256162VAUS7IPC V53C1256162VAUT8IPC V53C125616 |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit移动SDRAM 2.5伏FBGA封装16米x 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 56Mbit移动SDRAM 2.5伏FBGA封装16x 16
|
Electronic Theatre Controls, Inc.
|
| HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM
64M X 4 DDR DRAM, PBGA60
16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| K4M51323LC K4M51323LC-SDL_F K4M51323LC-SDN_G K4M51 |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
Mobile-SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MB84VP24491HK-70PBS MB84VP24491HK |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM 128M的（x16）的快闪记忆2M的（x16）的移动FCRAMTM
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
