PART |
Description |
Maker |
K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4X56163PG-FE K4X56163PG-FG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
K4X56163PG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
K4X56163PE-LFG K4X56163PE-LG |
16M x16 Mobile DDR SDRAM
|
Samsung Electronic
|
MB84VP23481FK-70 MB84VP23481FK-70PBS |
64M (X16) Page FLASH MEMORY & 32M (X16) Mobile FCRAMTM
|
Spansion Inc.
|
MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 512Mb: x4, x8, x16 DDR SDRAM Features 128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 16M X 16 DDR DRAM, 0.7 ns, PBGA60 Double Data Rate (DDR) SDRAM
|
Micron Technology
|
HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200 Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
M312L3223CT0 M312L3223CT0-LB3 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 M312L3223CT0 DDR SDRAM 184pin DIMM Data Sheet
|
Samsung Electronic
|
EDD5108ADTA-7BTI EDD5116ADTA-7BTI EDD5108ADTA-TI D |
512M bits DDR SDRAM WTR (Wide Temperature Range) 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Elpida Memory ELPIDA MEMORY INC
|
AS4DDR32M72PBG1-6_ET AS4DDR32M72PBG1-6_IT AS4DDR32 |
32M X 72 DDR DRAM, 0.8 ns, PBGA208 16 X 23 MM, 1 MM PITCH, PLASTIC, BGA-208 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor, Inc
|