| PART |
Description |
Maker |
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SUD50P06-15L |
P-Channel, Tj = 175 °C power MOSFET; low leakage current; P通道，Tj=175℃，低漏电流
P-Channel 60-V (D-S), 175C MOSFET
P-Channel 60-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SUP85N08-08 SUB85N08-08 |
N-Channel 75-V (D-S) 175 Degree Celcious MOSFET N通道75 - V（下副秘书长175度Celcious MOSFET
N-Channel 75-V (D-S) 175C MOSFET N通道75 - V（下副秘书长75荤MOSFET
N-Channel MOSFET
N-Channel 75-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SUM110N04-04 |
N-Channel 40-V (D-S) 175C MOSFET
N-Channel 40-V (D-S) 175C MOSFET
N-Channel 40-V (D-S) 175°C MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| SUB75N08-10 SUP75N08-10 |
N-Channel Enhancement-Mode Trans
N-Channel 75-V (D-S), 175C MOSFET
N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET
N-Channel 75 N通道75
|
VISAY[Vishay Siliconix]
Vishay Intertechnology, Inc.
|
| 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK1399 D14770EJ2V0DS00 2SK1399-L 2SK1399-T2B |
N-channel MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
From old datasheet system
|
NEC[NEC]
|
| 2SK3577 2SK3577-T1B 2SK3577-T2B |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| UPA1873 UPA1873GR-9JG UPA1873GR-9JG-E1 UPA1873GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开
N-channel enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| UPA1809 UPA1809GR-9JG UPA1809GR-9JG-E1 UPA1809GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开
N Channel enhancement MOS FET
|
NEC, Corp.
NEC Corp.
|
| UPA650TT UPA650TT-E1 UPA650TT-E2 |
P-channel enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| NTF3055L175T1 NTF3055L175T1G |
Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-223; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 2.0 A, 60 V, Logic Level 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
ON Semiconductor
|
