PART |
Description |
Maker |
MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc] Motorola, Inc.
|
MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
BUK9MJJ-65PLL |
Dual TrenchPLUS FET Logic Level FET
|
NXP Semiconductors N.V.
|
D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET 金属门射频硅场效应管 METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
SI4884 SI4884-02 |
TrenchMOS(tm) logic level FET From old datasheet system TrenchMOS? logic level FET TrenchMOS⑩ logic level FET TrenchMOS logic level FET TrenchMOSlogic level FET
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM TMOS POWER FET 12 AMPERES 60 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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