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HCS04MS - From old datasheet system Radiation Hardened Hex Inverter JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V

HCS04MS_547002.PDF Datasheet

 
Part No. HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K HCS04KMSR
Description From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V

File Size 103.81K  /  8 Page  

Maker

INTERSIL[Intersil Corporation]



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: HCS101-I/P
Maker: Microchip Technology
Pack: ETC
Stock: Reserved
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 Full text search : From old datasheet system Radiation Hardened Hex Inverter JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V


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