| PART |
Description |
Maker |
| ARF447 ARF446 |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 250V 250W 65MHz
N-CHANNEL ENHANCEMENT MODE
|
ADPOW[Advanced Power Technology]
|
| STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STP9NB50FP STP9NB50 5368 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的（不适用沟道增强模式MOSFET的）
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
STMicroelectronics N.V.
意法半导
|
| VN2410 VN2406 |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压240V,10Ω，N沟道增强型垂直DMOS结构场效应管) N沟道增强型场效应管垂直的DMOS（击穿电40伏，10Ω沟道增强型垂直的DMOS结构场效应管
N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,10惟锛?娌??澧?己????茨MOS缁???烘?搴??)
N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,6惟锛?娌??澧?己????茨MOS缁???烘?搴??)
|
Elan Microelectronics, Corp.
ELAN Microelctronics Corp .
|
| STP4NB50FP STP4NB50 5320 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
意法半导
STMicro
|
| TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET
N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor
ETC[ETC]
List of Unclassifed Manufacturers
|
| CMLDM7002A CMLDM7002AJ |
SMD Small Signal Mosfet Dual N-Channel Enhancement Mode
SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
CENTRAL[Central Semiconductor Corp]
|
| IXTH40N30NBSP IXTH40N30 IXTM40N30 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET)
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET)
From old datasheet system
N-Channel Enhancement MOSFET
|
IXYS Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STP2N60FI STP2N60 3137 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
