| PART |
Description |
Maker |
| 2N604006 2N6042G 2N6040G 2N6043G 2N6045G 2N6040 2N |
Plastic Medium−Power Complementary Silicon Transistors
Plastic Medium?Power Complementary Silicon Transistors
|
http://
ONSEMI[ON Semiconductor]
|
| BD157 |
PLASTIC MEDIUM POWER SILICON TRANSISTORS
|
Continental Device India Limited
|
| BDX53CG BDX53B07 |
Plastic Medium-Power Complementary Silicon Transistors
|
Rectron Semiconductor
|
| TIP107 |
PNP Plastic Medium-Power Silicon Transistors
|
Micro Commercial Compon...
|
| BD139 BD135G BD137 BD137G |
Plastic Medium Power Silicon NPN Transistor
|
Rectron Semiconductor
|
| MJE344-D |
Plastic NPN Silicon Medium-Power Transistor
|
ON Semiconductor
|
| 2N4920G 2N4918 2N4918_04 2N4919 2N4920 |
Medium-Power Plastic PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
| TIP122 |
PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conduct...
|
| MJE344G MJE34406 |
Plastic NPN Silicon Medium?Power Transistor
|
ON Semiconductor
|
| BDX53BG BDX53B06 BDX54BG BDX53CG BDX53B BDX54B BDX |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
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CDIL[Continental Device India Limited]
|
