| PART |
Description |
Maker |
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| GCA200BA60 |
IGBT MODULE(designed for high speed, high current switching applications)
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| RJP60F5DPM |
600 V - 40 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH6086BDPK RJH6086BDPK-15 |
600 V - 45 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F0DPM RJP60F0DPM-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F3DPQ-A0 |
600 V - 20 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F0DPE RJP60F0DPE-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| BUP304 Q67078-A4200-A2 |
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 35 A, 1000 V, N-CHANNEL IGBT, TO-218
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| RJH1CF4RDPQ-80 RJH1CF4RDPQ-80-15 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F7BDPQ-A0 |
600V - 50A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH6087BDPK RJH6087BDPK-15 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
