| PART |
Description |
Maker |
| HSMS2808 HSMS2827 HSMS2807 HSMS2817 HSMS2805 HSMS2 |
BRIDGE/RING DIODE ARRAY|SO
DIODE MULTIPLIER/TRIPLER|SO
ARRAY OF INDEPENDENT DIODES|SO 与独立二极管组成的阵列|
|
|
| BAS70-08S |
Silicon Schottky Diode(肖特基硅二极
ARRAY OF INDEPENDENT DIODES|SOT-363
|
SIEMENS AG
|
| DSEP2X35-06C |
ARRAY OF INDEPENDENT DIODES|SOT-227B 与独立二极管组成的阵列|的SOT - 227B
|
IXYS, Corp.
|
| APT2X61D80J |
ARRAY OF INDEPENDENT DIODES|SOT-227B 与独立二极管组成的阵列|的SOT - 227B
|
Microsemi, Corp.
|
| DSEI2X101-06A DSEI2X101-12A |
ARRAY OF INDEPENDENT DIODES|SOT-227B 与独立二极管组成的阵列|的SOT - 227B
|
TDK, Corp.
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| EDI5LM32128C150AM EDI5LM32128C120AI EDI5LM32128C12 |
General Purpose High Current NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-PDIP
Dual Independent Differential Amp for Low Power Applications from DC to 120MHz; Temperature Range: 0°C to 70°C; Package: 14-PDIP
Dual Independent Differential Amp for Low Power Applications from DC to 120MHz; Temperature Range: 0°C to 70°C; Package: 14-SOIC T&R
General Purpose High Current NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-SOIC T&R
Dual Independent Differential Amp for Low Power Applications from DC to 120MHz; Temperature Range: 0°C to 70°C; Package: 14-PDIP X32号的EEPROM模块
General Purpose High Current NPN Transistor Array; Temperature Range: -55°C to 125°C; Package: 16-SOIC T&R X32号的EEPROM模块
Dual Independent Differential Amp for Low Power Applications from DC to 120MHz; Temperature Range: 0°C to 70°C; Package: 14-SOIC
|
Calogic, LLC
Hangzhou Silan Microelectronics Co., Ltd.
|
| ET1275 1SI50A100 |
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 15A I(C)
TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|独立| 1KV交五（巴西）总裁| 50A条一（c
|
IXYS, Corp.
|
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| 54ABT273W/883 54ABT273E/883 54ABT273J/883 |
Single-/Dual-/Triple-Voltage µP Supervisory Circuits with Independent Watchdog Output
Octal D-Type Flip-Flop
Single-/Dual-/Triple-Voltage µP Supervisory Circuits with Independent Watchdog Output 八路D类触发器
|
SIEMENS AG
|
| BK32164L680-T |
Multilayer Chip Bead Array Inductors (BK array series)
|
Taiyo Yuden (U.S.A.), Inc
|
