PART |
Description |
Maker |
MX27C8000A MX27C8000AMC-10 MX27C8000AMC-12 MX27C80 |
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PQCC32 JT 21C 21#16 SKT RECP 1M X 8 OTPROM, 90 ns, PDSO32 Single Output LDO, 100mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 1M X 8 OTPROM, 120 ns, PDSO32 8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 120 ns, PQCC32 8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 100 ns, PQCC32 8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PDIP32
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
TC58128FT |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
NMC27C64 NMC27C64N200 NMC27C64Q150 NMC27C64NE200 |
65 /536-Bit (8192 x 8) CMOS EPROM IC-64K CMOS PROM 8K X 8 EEPROM 5V, 200 ns, PDIP28 65,536-Bit (8192 x 8) CMOS EPROM 64KBit (8192 x 8) CMOS EPROM [Life-time buy]
|
Fairchild Semiconductor, Corp.
|
K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85 Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85 4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM From old datasheet system 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
TC582562AXB |
CMOS NAND EPROM
|
Toshiba
|
TC58NS100DC |
1 GBit CMOS NAND EPROM
|
Toshiba
|
MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
FM27C512Q FM27C512N90 FM27C512V120 FM27C512V150 FM |
512K-Bit (64K x 8) High Performance CMOS EPROM 524,288-Bit (64K x 8) High Performance CMOS EPROM 524/288-Bit (64K x 8) High Performance CMOS EPROM Capacitors.. 100 PIECE MIN.. NC/NR
|
FAIRCHILD[Fairchild Semiconductor] PROM
|
HT27C010 |
CMOS 128K X 8-Bit OTP EPROM OTP CMOS 128Kx 8-Bit EPROM
|
Holtek Semiconductor In... HOLTEK[Holtek Semiconductor Inc]
|
27C256-15FA 27C256A 27C256 27C256D 27C256-12FA 27C |
2-7 V, 256K-bit CMOS EPROM (32Kx8) 256K-bit CMOS EPROM (32K x 8)
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512K x 8 bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|