| PART |
Description |
Maker |
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 2N6246 2N6248 2N6247 2N6469 |
SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| BDX14A BDX14AA BDX14 |
PNP SILICON TRANSISTOR, EPITAXIAL BASE 进步党硅晶体管，外延基地
PNP SILICON TRANSISTOR/ EPITAXIAL BASE
|
Seme LAB
TT electronics Semelab, Ltd.
|
| BD201 BD202 BD203 |
Epitaxial-Base, Silicon
|
New Jersey Semi-Conduct...
|
| BDX2012 |
SILICON TRANSISTORS EPITAXIAL BASE
|
Comset Semiconductor
|
| 2N6290 2N6291 2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp...
|
| TIP102 |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| BDS19SMD BDS18SMD BDS19 BDS18 |
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
|
SemeLAB
SEME-LAB[Seme LAB]
|
| TIP147T TIP145T TIP146T TIP147TTU |
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
| BD241B BD241 BD241A |
NPN SILCON EPITAXIAL BASE POWER TRANSISTORS npn型秀康外延基地功率晶体管
|
Rectron Semiconductor
MICRO-ELECTRONICS[Micro Electronics]
|
| TIP145T |
PNP Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorPNP硅外延达林顿晶体管（内置基极-射极分流电阻单片结构
|
Fairchild Semiconductor Corporation
|
