PART |
Description |
Maker |
GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
GT60M323 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
GT50J121 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
GT30J121 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
GT8G132 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
Toshiba Semiconductor
|
GT80J101B |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15 |
55 A, 1200 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
MGP7N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate IGBT 0.5 A @ 25 600 V From old datasheet system
|
ONSEMI[ON Semiconductor]
|