PART |
Description |
Maker |
THMY641661BEG-100 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块) 16M Word x 64 Bit Synchronous DRAM Module(16M瀛?x 64浣??姝ュ???AM妯″?)
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Toshiba Corporation
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K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90 4M x 32Bit x 4 Banks Mobile-SDRAM From old datasheet system
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDU |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
UPD4516161A |
16M Bit Synchronous DRAM
|
NEC
|
HSD16M64B8A HMD16M64B8A-10 HMD16M64B8A-10L HMD16M6 |
The HSD16M64B8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. Synchronous DRAM Module 128Mbyte (16Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V
|
List of Unclassifed Manufacturers ETC Hanbit Electronics Co.,Ltd
|
EM6AA160TSA EM6AA160TSA-4G EM6AA160TSA-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
HY57V561620CLTP-6I HY57V561620CT-SI HY57V561620CLT |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 SDRAM - 256Mb
|
HYNIX SEMICONDUCTOR INC
|
THMY6416H1EG-80 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块)
|
Toshiba Corporation
|
MT48G16M16LFBG-10IT MT48G16M16LFBG-75 MT48G16M16LF |
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 14 MM, LEAD FREE, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, LEAD FREE, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 11 X 8 MM, LEAD FREE, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 11 X 8 MM, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 14 MM, VFBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54
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PCA Electronics, Inc.
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