| PART |
Description |
Maker |
| IDT71V428YS10YYYG IDT71V428YS10YYYGI IDT71V428S10Y |
3.3V CMOS Static RAM 4 Meg (1M x 4-Bit)
3.3V 1M x 4 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Techn...
IDT[Integrated Device Technology]
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC62VV51216LL IC62VV51216L IC62VV51216L-70B IC62VV |
512K x 16 bit 1.8V and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IC62C256 IC62C256-45T IC62C256-45TI IC62C256-45U I |
70ns; 5V; 32K x 8 low power CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
45ns; 5V; 32K x 8 low power CMOS static RAM
|
Integrated Circuit Solution...
ICSI[Integrated Circuit Solution Inc]
|
| STK11C68 STK11C68-C20 STK11C68-C20I STK11C68-C25 S |
8K x 8 nvSRAM QuantumTrapCMOS Nonvolatile Static RAM 8K的8非易失QuantumTrap⑩的CMOS非易失性静态随机存储器
8K x 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
8K x 8 nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM
8K x 8 nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM
|
Electronic Theatre Controls, Inc.
Simtek
ETC[ETC]
List of Unclassifed Manufacturers
|
| TC55V1664BJ-12 TC55V1664BFT-10 |
64K Word x 16 Bit CMOS Static RAM(64Kx 16 CMOS 静RAM)
64K Word x 16 Bit CMOS Static RAM(64K瀛?x 16 浣?CMOS ???RAM)
|
Toshiba Corporation
|
| M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch
From old datasheet system
524288-BIT CMOS STATIC RAM
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| GLT7256L08-10J3 GLT7256L08-10TS GLT7256L08-12J3 GL |
10ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
12ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
15ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
8ns; Ultra high performance 3.3V 32K x 8 CMOS static RAM
|
G-LINK Technology
|
| IC62LV25616LL IC62LV25616L IC62LV25616LL-70T IC62L |
256Kx16 bit Low Voltage and Ultra Low Power CMOS Static RAM
ASYNCHRONOUS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IS61C3216 IS61C3216NBSP IS61C3216-20TI IS61C3216-1 |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K的16 HIGH-SPEED的CMOS静态RAM
ASYNCHRONOUS STATIC RAM
|
Integrated Silicon Solution, Inc.
ICSI[Integrated Circuit Solution Inc]
|
| KM684000A |
512Kx8 bit Low Power CMOS Static RAM(512K x 8浣?????CMOS ???RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
