| PART |
Description |
Maker |
| NTE955MC NTE955 |
Integrated Circuit CMOS Timing Circuit
|
NTE[NTE Electronics]
|
| DS1100 |
5-Tap Economy Timing Element (Delay Line) All-Silicon Timing Circuit
|
Maxim Integrated Products
|
| S8377-512Q S8377-256Q S8377-128Q S8378-256Q S8378- |
CMOS linear image sensor Built-in timing generator and signal processing circuit; single 5 V supply operation
|
Hamamatsu Corporation
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC55V8512FTI-15 TC55V8512JI-15 TC55V8512FTI-12 TC5 |
524,288-WORD BY 16-BIT CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| NTE1198 |
Integrated Circuit CMOS Frequency Divider
|
NTE[NTE Electronics]
|
| NTE1208 |
Integrated Circuit CMOS, Phase Comparator
|
NTE[NTE Electronics]
|
| TB1239BF |
Bi-CMOS Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FV321 TC58FVB321FT TC58FVB321FT-10 TC58FVB321F |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
32-MBIT (4M 】 8 BITS / 2M 】 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC74AC257P07 TC74AC257F TC74AC257FN TC74AC257P TC7 |
CMOS Digital Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
