| PART |
Description |
Maker |
| NTE6236 |
Powerblock Module
|
NTE[NTE Electronics]
|
| NTE6234 |
Powerblock Module
|
NTE[NTE Electronics]
|
| NTE6222 NTE5708 NTE5714 NTE5724 |
Powerblock Modules Powerblock模块
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| HAS030ZG-A HAS030ZJ-A HAS030YG HAS030YG-A HAS030YH |
Filter Module with Resistor Network 腐殖酸系 30
Xfmr Module 腐殖酸系 30
Transformers Only Module
HAS SERIES - 30 WATT
|
Atmel, Corp.
Positronic Industries, Inc.
POWER-ONE[Power-One]
|
| WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛?
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛?
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时5ns
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时0ns
|
White Electronic Designs Corporation
|
| EDI8C32128C WS128K32-XXX EDI8C32128LP17EI |
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块（存取时5705555ns
128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时5705555ns
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块（存取时57055555ns
128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时57205555ns 128Kx32 SRAM的模块（低功耗的CMOS28Kx32静态内存模块（存取时间15,17,20,25,35,45,55纳秒））
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
|
White Electronic Designs Corporation
TE Connectivity, Ltd.
|
| OL392L OL3492L OL392L_3492L |
FIBER OPTIC DFB LASER MODULE EMITTER, 1280-1340nm, PANEL MOUNT
1.3 ?? Coaxial DFB Laser Module
From old datasheet system
1.3 レm Coaxial DFB Laser Module
1.3 μm Coaxial DFB Laser Module
1.3 m Coaxial DFB Laser Module
|
OKI ELECTRIC INDUSTRY CO LTD
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU |
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYS72V8000GU-10 HYS64V8000GU-10 HS648000 HYS64V800 |
3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module 8M X 72 SYNCHRONOUS DRAM MODULE, 7 ns, DMA168
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| GBPC2501 GBPC2510 GBPC2508 GBPC25005 GBPC2502 GBPC |
50-A, 8-V to 14-V Input, Non-Isolated, Wide Output Adjust, Vertical Power Module w/ TurboTrans Techn 21-DIP MODULE -40 to 85 单相玻璃钝化整流
1.2 to 5.5 V 16-A, 12-V Input, Non-Isolated Wide-Adjust SIP Module 12-SIP MODULE -40 to 85
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 25 Amperes)
|
Shanghai Sunrise Electronics Co., LTD.
SSE[Shanghai Sunrise Electronics]
Pan Jit International Inc.
|
| AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
|
Analog Devices, Inc.
TOKO, Inc.
Altera, Corp.
|
