| PART |
Description |
Maker |
| TC58DAM72A1FT00 TC58DVM72A1F |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128兆位6米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
Toshiba, Corp.
|
| W9864G6IH W9864G6IH-7 W9864G6IH-7S W9864G6IH-5 W98 |
1M × 4BANKS × 16BITS SDRAM
|
Winbond
http://
|
| IS42RM16400K |
1M x 16Bits x 4Banks Mobile Synchronous DRAM
|
ISSI
|
| IS42VM16320E |
8M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS43LR16800F-6BLI |
2M x 16Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solution...
|
| IS42VM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS42SM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| SN8P0447Q SN8P0403S SN8P0404K SN8P0406P SN8P0434S |
OPT ROM:4096 16bits / RAM:128 8bits
OPT ROM:4096 16bits , RAM:128 8bits
|
SONIX[SONiX Technology Company]
|
| HY62SF16404C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16404E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62UF1680 |
High speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX
|
