| PART |
Description |
Maker |
| KMM5321200C2W KMM5321200C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
| KMM5322204C2WG KMM5322204C2W |
2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V 200万32的DRAM上海药物研究所使用1Mx16，每1000刷新V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| AS4C1M16E5-60TC AS4C1M16E5-50TC AS4C1M16E5-60JC AS |
DRAM|EDO|1MX16|CMOS|TSOP|50PIN|PLASTIC
DRAM|EDO|1MX16|CMOS|SOJ|42PIN|PLASTIC 内存| EDO公司| 1MX16 |CMOS | SOJ | 42PIN |塑料
1M X 16 EDO DRAM, 50 ns, PDSO44
|
Amphenol, Corp.
ALLIANCE SEMICONDUCTOR CORP
|
| KM23C16000CET |
16M-Bit (2Mx8 /1Mx16)CMOS Mask ROM(16M(2Mx8 /1Mx16) CMOS掩膜ROM) 1,600位（2Mx8 / 1Mx16）的CMOS掩模ROM,600位（2Mx8 / 1Mx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| AS4C1M16E5 |
5V / 3.3V Edo DRAM, 16M, 1Mx16
|
ALLIANCE
|
| TC51V16165BFT-70 |
DRAM,EDO,1MX16,CMOS,TSOP,50PIN,PLASTIC
From old datasheet system
|
Toshiba.
|
| KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004 |
4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53216000BK KMM53216000BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| CL001E08325B0DJ-60 20084C |
8M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
|
Fox Electronics
|
