PART |
Description |
Maker |
AT28BV64-30PC AT28BV64-30JC AT28BV64-30JI |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 3V, 300 ns, PDIP28 64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 3V, 300 ns, PQCC32
|
Atmel, Corp.
|
AT28C64-25 AT28C64-20 AT28C64E-1 AT28C64E-12PI AT2 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 250 ns, PDSO28 8-Bit Shift Registers With 3-State Output Registers 16-TSSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PQCC32 Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 8K X 8 EEPROM 5V, 250 ns, UUC27 64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28 Dual Positive-Edge-Triggered D-Type Flip-Flops 14-SSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PDSO28 64K (8K X 8) CMOS E2PROM 64K 8K x 8 CMOS E2PROM
|
Atmel, Corp. PROM Atmel Corp. ATMEL[ATMEL Corporation]
|
AT27BV1024 AT27BV1024-12JU AT27BV102407 AT27BV1024 |
1-Megabit (64K x 16) Unregulated Battery-Voltage High-Speed OTP EPROM
|
ATMEL Corporation
|
IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中(基于电池 64K Nonvolatile SRAM IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc. Dallas
|
LA5619M |
Lead Battery Charger IC with Battery Voltage Detection Function
|
SANYO[Sanyo Semicon Device]
|
CY7C4271V-15JC CY7C4271V-15JI CY7C4271V-25JC CY7C4 |
16Kx9 Low Voltage Deep Sync FIFOs(16Kx9低压深同步先进先出(FIFO 16K/32K/64K/128K x 9 Low-Voltage Deep Sync⑩ FIFOs 16K/32K/64K/128K x 9 Low-Voltage Deep Sync FIFOs 16K/32K/64K/128K x 9 Low-Voltage Deep Sync?/a> FIFOs 16K/32K/64K/128K x 9 Low-Voltage Deep Sync?FIFOs
|
Cypress Semiconductor Corp.
|
28LV64A-30I_P 28LV64A 28LV64A-20/SO 28LV64A-20/TS |
SENSOR, QUICK DISCONNECT WITH EUROFAST 64K的(8K的8)低电压的CMOS EEPROM 64K (8K x 8) Low Voltage CMOS EEPROM 64K的(8K的8)低电压的CMOS EEPROM 64K (8K x 8) Low Voltage CMOS EEPROM(低压,64K CMOS 并行EEPROM) 64K的(8K的8)低电压的CMOS EEPROM的(低压4K的位,并行的CMOS EEPROM的) Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
|
Microchip Technology, Inc. Microchip Technology Inc.
|
GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100 117MHz 11ns 64K x 32 2M synchronous burst SRAM 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
CY7C187 CY7C187-15PC CY7C187-15VC CY7C187-20PC CY7 |
64K x 1 Static RAM 64K X 1 STANDARD SRAM, 15 ns, PDIP22 64K x 1 Static RAM 64K的1静态RAM Memory : Async SRAMs
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|