| PART |
Description |
Maker |
| SB120-18 2515 |
180V, 12A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
From old datasheet system
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| SB80-18 |
Schottky Barrier Diode (Twin Type Cathode Common) 180V, 8A Rectifier
180V/ 8A Rectifier
|
Sanyo Semicon Device
|
| HUF76407P3 |
12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| TFP-MHP20LF-0.022OHM-J TFP-MHP50LF-0.01OHM-J TFP-M |
RESISTOR, 1 W, 5 %, 250 ppm, 0.022 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, 1 W, 5 %, 250 ppm, 0.01 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, 1 W, 5 %, 250 ppm, 0.047 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, 1 W, 5 %, 250 ppm, 0.015 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, 1 W, 5 %, 250 ppm, 0.033 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, 1 W, 5 %, 250 ppm, 0.068 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
RESISTOR, 1 W, 5 %, 250 ppm, 0.09 ohm, THROUGH HOLE MOUNT TO-220, ROHS COMPLIANT
|
IRC Advanced Film
|
| CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B
25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238
PNP PLASTIC POWER TRANSISTORS
Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
|
Continental Device India Limited
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| RFP12N10L FN1512 |
12A/ 100V/ 0.200 Ohm/ Logic Level/ N-Channel Power MOSFET
From old datasheet system
12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET
|
Intersil Corporation
|
| IRFF9220 FN2288 |
-2.5A/ -200V/ 1.5 Ohm/ P-Channel Power MOSFETs
From old datasheet system
-2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs
|
Intersil Corporation
|
| FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
|
