| PART |
Description |
Maker |
| KMM53632000CKG KMM53632000CK |
32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM372F3200BS1 KMM372F3280BS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新，3.3
|
Samsung Semiconductor Co., Ltd.
|
| KMM53616004CK KMM53616004CKG |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53616000CKG KMM53616000CK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53616004CK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
|
Samsung Semiconductor Co., Ltd.
|
| M374F3200DJ1-C M374F3280DJ1-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM372V3280CK4 KMM372V3200CK4 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM53232004BV |
32M x 32 DRAM SIMM(32M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM372V3280BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| HY5PS121621AF HY5PS121621AF-C3 HY5PS121621AF-C4 HY |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, PBGA84 ROHS COMPLIANT, FBGA-84
32M X 16 DDR DRAM, PBGA84 FBGA-84
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
